MRF6VP2600H RF Power LDMOS Transistors High Ruggedness 600W 50V 2 to 500 MHz

Description

Part No. ： MRF6VP2600HR6   MRF6VP2600H
Description：
600W   , 50V  , 2 to 500MHz  ,
RF Power LDMOS Transistors High Ruggedness
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
• Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
Power Gain ó 25 dB
Drain Efficiency ó 28.5%
ACPR @ 4 MHz Offset ó --61 dBc @ 4 kHz Bandwidth
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA,
Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain ó 25.3 dB
Drain Efficiency ó 59%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 μsec, Duty Cycle = 20%
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
Maker：FREESCALE [Freescale Semiconductor, Inc]
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